Title of article :
Structural, electronic and energetic properties of water adsorbed on β-Si3N4 (0 0 0 1) surface: First-principles calculations
Author/Authors :
Nisar، نويسنده , , J. and Araْjo، نويسنده , , C. Moysés and Ahuja، نويسنده , , R.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2010
Abstract :
Structural, energetic and electronic properties of water molecules adsorbed on β-Si3N4 (0 0 0 1) surface, at various coverages, are investigated using density functional theory. At low coverages (θ ⩽ 0.5), it is found that all H2O molecules undergo spontaneous dissociation forming hydroxyl (OH) and imino (NH) groups where the reactive sites are identified, a result shown for the first time using ab initio theory. For higher coverages (θ > 0.5), only partial dissociation takes place where some of the molecules stay intact being bound via H-bond in good agreement with experimental findings. The driving force for the water dissociation has been identified to be dangling bonds on lower coordinated N and Si surface atoms showing that not all surface atoms are reactive corroborating with previous experimental findings.
Keywords :
Water–semiconductor interface , Density functional theory , Silicon nitride
Journal title :
Surface Science
Journal title :
Surface Science