Title of article :
Re-investigation of the Bi-induced Si(111)-() surfaces by low-energy electron diffraction
Author/Authors :
Kuzumaki، نويسنده , , Takuya and Shirasawa، نويسنده , , Tetsuroh and Mizuno، نويسنده , , Seigi and Ueno، نويسنده , , Nobuo and Tochihara، نويسنده , , Hiroshi and Sakamoto، نويسنده , , Kazuyuki، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2010
Abstract :
The atomic structures of the Bi/Si(111)-( 3 × 3 ) reconstructed surfaces obtained at different adsorbate coverages were studied by dynamical low-energy electron diffraction (LEED) I–V analysis. The experimentally obtained I–V curves of the β-Bi/Si(111)-( 3 × 3 ) surface, which is formed by a Bi coverage of 1 ML, showed good agreement with the curves calculated for the milk stool model, a model proposed in the literature. In contrast to this result, the I–V curves of the α-phase obtained at a coverage of 1/3 ML do not agree with those reported in early LEED studies. We found that the I–V curves reported in the former LEED studies resemble closely to the results obtained for the surface on which the β and α-phases coexist. Based on the obtained I–V curves, we propose a more reliable structural model for the α-phase, and present the way to determine the presence of a high quality α-phase by using LEED.
Keywords :
surface structure , Semiconductor surfaces , Low-energy electron diffraction (LEED) , Silicon , Bismuth
Journal title :
Surface Science
Journal title :
Surface Science