Title of article
Re-investigation of the Bi-induced Si(111)-() surfaces by low-energy electron diffraction
Author/Authors
Kuzumaki، نويسنده , , Takuya and Shirasawa، نويسنده , , Tetsuroh and Mizuno، نويسنده , , Seigi and Ueno، نويسنده , , Nobuo and Tochihara، نويسنده , , Hiroshi and Sakamoto، نويسنده , , Kazuyuki، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2010
Pages
5
From page
1044
To page
1048
Abstract
The atomic structures of the Bi/Si(111)-( 3 × 3 ) reconstructed surfaces obtained at different adsorbate coverages were studied by dynamical low-energy electron diffraction (LEED) I–V analysis. The experimentally obtained I–V curves of the β-Bi/Si(111)-( 3 × 3 ) surface, which is formed by a Bi coverage of 1 ML, showed good agreement with the curves calculated for the milk stool model, a model proposed in the literature. In contrast to this result, the I–V curves of the α-phase obtained at a coverage of 1/3 ML do not agree with those reported in early LEED studies. We found that the I–V curves reported in the former LEED studies resemble closely to the results obtained for the surface on which the β and α-phases coexist. Based on the obtained I–V curves, we propose a more reliable structural model for the α-phase, and present the way to determine the presence of a high quality α-phase by using LEED.
Keywords
surface structure , Semiconductor surfaces , Low-energy electron diffraction (LEED) , Silicon , Bismuth
Journal title
Surface Science
Serial Year
2010
Journal title
Surface Science
Record number
1685754
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