Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface

InAsSbP quantum dots (QDs) and nano-pits (NPs) are grown on a InAs(100) surface by liquid phase epitaxy (LPE). Their morphology, dimensions and distribution density are investigated by high resolution scanning electron microscopy, Fourier-transform infrared spectroscopy, X-ray diffraction and total energy calculations. QDs average density ranges from 5 to 7 × 109 cm−2, with heights and widths having a Gaussian distribution with sizes from 5 nm to 15 nm and 10 nm to 40 nm respectively. The average pits density is (2–6) × 1010 cm−2 with dimensions ranging from 5–30 nm in width and depth. We also find a shift in the absorption edge towards the longer wavelengths together with broadening towards shorter wavelengths indicating that these QDs and lateral overgrown nano-pits are grown at the n-InAs/p-InAsSbP heterojunction interface. Together with total energy calculations, the results indicate that lattice mismatch ratio plays a central role in the growth of these strain-induced nano-objects.