A photoelectron spectroscopy study of ultra-thin epitaxial alumina layers grown on Cu(111) surface

Thin epitaxial alumina layers were grown on the Cu(111) surface using simultaneous aluminum deposition and oxygen exposure. Different substrate temperatures during the deposition resulted in layers with different thicknesses, growth rates, crystallinity and epitaxy. Low energy electron diffraction measurements confirmed the epitaxial growth for substrate temperatures above 870 K. The Al 2p doublet was studied by means of photoelectron spectroscopy in order to determine the alumina termination at the metal-oxide interface. A strong dependence on the preparation temperature was found and both aluminum and oxygen terminated interfaces were created.