Author/Authors :
De Padova، نويسنده , , P. and Mariot، نويسنده , , J.-M. and Favre، نويسنده , , L. and Berbezier، نويسنده , , I. and Olivieri، نويسنده , , B. and Perfetti، نويسنده , , P. and Quaresima، نويسنده , , C. and Ottaviani، نويسنده , , C. and Taleb-Ibrahimi، نويسنده , , A. and Le Fèvre، نويسنده , , P. and Bertran، نويسنده , , F. and Heckmann، نويسنده , , O. and Richter، نويسنده , , M.C. and Ndiaye، نويسنده , , W. and DʹOrazio، نويسنده , , F. and Lucari، نويسنده , , F. and Cacho، نويسنده , , C.M. and Hricovini، نويسنده , , K.، نويسنده ,
Abstract :
An investigation of the structural, magnetic and electronic properties of ≈ 3 nm thick Mn5Ge3 films epitaxially grown on a Ge(1 1 1)-c(2 × 8) reconstructed surface is reported. High resolution transmission electron microscopy and selected area electron diffraction give evidence of 2.2% in-plane compressive strain between the Mn5Ge3 film and the Ge substrate. Magnetooptical Kerr effect measurements show that the films are ferromagnetic with a Curie temperature of ≈ 325 K. The analysis of Ge 3d core level photoelectron spectra of the Mn5Ge3 films allows determining an upper limit of 76 meV for the Ge 3d5/2 core-hole lifetime broadening. The Ge 3d3/2 core-hole lifetime broadening is found to be 15 meV larger than that of the Ge 3d5/2 core hole, because of the existence of a Coster–Kronig decay channel due to the metallic character of Mn5Ge3.
Keywords :
Electron microscopy , Transmission high-energy electron diffraction , Synchrotron radiation photoelectron spectroscopy , Metal-semiconductor magnetic thin film structures , Mn5Ge3
