Title of article
Pseudogap behavior in Pr0.5Sr0.5MnO3: A photoemission study
Author/Authors
Pal، نويسنده , , Prabir and Dalai، نويسنده , , M.K. and Ulfat، نويسنده , , I.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2011
Pages
3
From page
875
To page
877
Abstract
The valence band electronic structure of Pr0.5Sr0.5MnO3 has been investigated across its paramagnetic metallic (PMM)–ferromagnetic metallic (FMM)–antiferromagnetic insulator (AFMI) transition. Using surface sensitive high resolution photoemission we have conclusively demonstrated the presence of a pseudogap of magnitude 80 meV in the near Fermi level electronic spectrum in the PMM and FMM phases and finite intensity at the Fermi level in the charge ordering (CO)-AFMI phase. The pseudogap behavior is explained in terms of the strong electron–phonon interaction and the formation of Jahn Teller (JT) polarons, indicating the charge localizations. The finite intensity at the Fermi level in the insulating phase showed a lack of charge ordering in the surface of the Pr0.5Sr0.5MnO3 samples.
Keywords
Electronic structure , Photoemission , Colossal magnetoresistance
Journal title
Surface Science
Serial Year
2011
Journal title
Surface Science
Record number
1686048
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