Author/Authors :
C. Chettaoui، نويسنده , , A. and Penuelas، نويسنده , , J. and Gobaut، نويسنده , , B. and Cheng، نويسنده , , J. and Benarmouche، نويسنده , , A. and Robach، نويسنده , , Y. and Hollinger، نويسنده , , G. and Saint-Girons، نويسنده , , G.، نويسنده ,
Abstract :
The structural properties of InP islands grown by molecular beam epitaxy on SrTiO3 substrates are studied. The evolution of the semiconducting islands size and density with growth temperature is described. The structural results reveal an original behavior: the islands orientation with respect to the substrate can be tuned with growth temperature. Moreover; X-ray diffraction results show that the islands are fully relaxed, which is in accordance with the specificities of the semiconductor/oxide interface. The structural transition is observed by atomic force microscopy, X-ray diffraction and electron diffraction.
Keywords :
Molecular Beam Epitaxy , Indium phosphide , atomic force microscopy , X-Ray scattering , Nucleation , diffraction , reflection
