Domain structure and optical property of epitaxial indium oxide film deposited on MgO(100) substrate

Indium oxide (In2O3) film has been deposited on MgO(100) substrate at 600 °C by metalorganic chemical vapor deposition (MOCVD). The crystal structure and epitaxial relationship of the sample were examined by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The results showed a clear epitaxial relationship of In2O3(111)||MgO(100) with In2O3[011̅]||MgO<072> or In2O3[01 1 ¯ ]||MgO<011>. A multiple domain structure was found inside the In2O3 film and a theoretical model clarifying the geometrical relationships between each domain and the substrate has been proposed. Scanning electron microscopy (SEM) micrograph showed that the main surface features were triangle-shaped grains on the film. The absolute average transmittance of the obtained film in the visible range was over 93%.