Title of article :
Interplay between adsorbed C60 fullerenes and point defects on a Si(111)–In reconstructed surface
Author/Authors :
Gruznev، نويسنده , , D.V. and Matetskiy، نويسنده , , A.V. and Zotov، نويسنده , , A.V. and Saranin، نويسنده , , A.A. and Chou، نويسنده , , J.P. and Wei، نويسنده , , C.M. and Wang، نويسنده , , Y.L.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2011
Pages :
5
From page :
2050
To page :
2054
Abstract :
Adsorption of C60 onto Si(111) 3 × 3 –In surface presents a fascinating example of interplay between molecular adsorbate and surface structural defects. It has been found that adsorbing C60 molecules are trapped by the substitutional Si-defects. In turn, the group of a few adsorbed C60 can act as a trap for the mobile vacancies of the 3 × 3 –In reconstruction. Namely, adsorbed C60 induces a strain in the indium layer, and when a mobile vacancy happens to get into the surface area surrounded by fullerenes, the In atoms between the C60 and the vacancy shift from the T4 to the H3 sites, fixing a vacancy in a given location.
Keywords :
Silicon , Indium , surface structure , Atom–solid interactions , Scanning tunneling microscopy (STM) , Fullerence
Journal title :
Surface Science
Serial Year :
2011
Journal title :
Surface Science
Record number :
1686224
Link To Document :
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