Title of article :
Kinetic Monte-Carlo simulation of the homoepitaxial growth of MgO{001} thin films by molecular deposition
Author/Authors :
Antoshchenkova، نويسنده , , Ekaterina and Hayoun، نويسنده , , Marc and Finocchi، نويسنده , , Fabio and Geneste، نويسنده , , Grégory، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2012
Pages :
10
From page :
605
To page :
614
Abstract :
A lattice-based kinetic Monte-Carlo (KMC) code has been developed to investigate the MgO{001} crystal growth from deposition of MgO molecules, as a prototypical case of the growth of oxide thin films. The KMC approach has been designed on the basis of an extensive database including all possible diffusion mechanisms. The corresponding activation energies have been computed through first-principles calculations at zero temperature or from Arrhenius plots of the frequencies obtained by molecular dynamics simulations with empirical potentials. Crystal growth occurs layer by layer, as experimentally observed, and the diffusion of admolecules leads to a high capacity of nucleation, which is enhanced by vacancy diffusion. We have characterized the growth through surface roughness, size distribution and density of the islands, and filling ratios of the growing layers. Moreover, we have analysed the influence of each elementary mechanism on the growth. The best quality of the deposited layers is reached for temperatures larger than 700 K and for pressures smaller than 0.1 Torr. For these conditions, the simulated surface roughness is fully consistent with available experimental results.
Keywords :
Thin films , surface diffusion , Kinetic Monte-Carlo , Crystal growth , Clusters , Crystalline oxides , Islands , Ionic compounds
Journal title :
Surface Science
Serial Year :
2012
Journal title :
Surface Science
Record number :
1686356
Link To Document :
بازگشت