Title of article :
Structure of V thin films on Al(100) using XPD, LEED, and LEIS
Author/Authors :
Priyantha، نويسنده , , W. and Droopad، نويسنده , , R. and Kopczyk، نويسنده , , M. and Smith، نويسنده , , R.J. and Kayani، نويسنده , , A.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2012
Pages :
7
From page :
1160
To page :
1166
Abstract :
We have used X-ray photoelectron diffraction (XPD), low energy electron diffraction (LEED), and low energy ion scattering (LEIS) to determine the atomic structure of V thin films grown on the Al(100) single crystal surface. For V film thicknesses ranging from 0.75 ML–7 ML, the LEED patterns show no significant changes from the p(1 × 1) symmetry of a clean Al(100) surface, other than becoming more diffuse for higher V coverage. XPD and LEIS spectra indicate that during the initial deposition (1–3 ML) V atoms diffuse into the Al lattice, and tend to accumulate at the surface during subsequent deposition. Strain associated with the lattice mismatch for V and Al is likely relieved by the formation of a surface alloy during the first few MLʹs of V deposition. For 7 ML V coverage, XPD and LEED showed that an ordered V structure is stabilized on the Al(100) surface. Due to the close resemblance of the V and Al XPD polar scans, we conclude that V and Al are occupying similar lattice sites in tetragonally distorted bcc lattice, although the specific lattice location of the V and Al atoms is not clear.
Keywords :
Low energy electron diffraction (LEED) , X-ray photoelectron diffraction (XPD) , Thin Film Growth , AL , V , surface alloying
Journal title :
Surface Science
Serial Year :
2012
Journal title :
Surface Science
Record number :
1686581
Link To Document :
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