Author/Authors :
Proessdorf، نويسنده , , A. and Rodenbach، نويسنده , , Rui P. and Grosse، نويسنده , , F. and Hanke، نويسنده , , M. and Braun، نويسنده , , W. and Riechert، نويسنده , , H. and Hu، نويسنده , , W. and Fujikawa، نويسنده , , S. and Kozu، نويسنده , , M. and Takahasi، نويسنده , , M.، نويسنده ,
Abstract :
The InSb(111)A surface is prepared by molecular beam epitaxy and investigated by reflection high-energy electron diffraction (RHEED). The complete two dimensional diffraction pattern is mapped out by azimuthal RHEED (ARHEED). Two reconstructions are identified and additionally a set of new symmetries is observed. At low temperature a 2 3 × 2 3 pattern is observed which changes to the (2 × 2) pattern at high temperature. In contrast to the GaSb(111)A surface the observed 2 3 × 2 3 structure is not stabilized by configurational entropy.
Keywords :
Reflection high energy electron diffraction , surface reconstruction , antimonides , Semiconducting III–V materials , Molecular Beam Epitaxy
