• Title of article

    Roles of sodium induced defects in CuInSe2 by first principles calculation

  • Author/Authors

    Sun، نويسنده , , Xianzhong and Jiang، نويسنده , , Fangdan and Feng، نويسنده , , Jiayou، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2009
  • Pages
    4
  • From page
    31
  • To page
    34
  • Abstract
    In order to investigate the roles of sodium in CuInSe2 absorber layer, the formation energy of sodium induced point defects and bound defects in CuInSe2 are calculated using first principles calculations within supercell approximation approach. Neutral defect NaCu and acceptor defect NaIn are found to form easily, which explains the enhanced p-type conductivity of CuInSe2 by sodium incorporation. More than that, sodium induced defects are energetically favorable to form bound defects with intrinsic defects (i.e. VCu, Cui, InCu, and VSe), which is responsible for the increased range of composition. The contour plot of total valence charge density suggests the chemical bonding between NaIn and Se atoms is stronger than that of Nai and NaCu.
  • Keywords
    first principles calculation , Bound defect , Supercell approximation , Sodium induced defect
  • Journal title
    Computational Materials Science
  • Serial Year
    2009
  • Journal title
    Computational Materials Science
  • Record number

    1686918