Title of article
DFT calculation of the electronic properties and EEL spectrum of NiSi2
Author/Authors
Efrain and Nٌْez-Gonzلlez، نويسنده , , Roberto and Reyes-Serrato، نويسنده , , Armando and Galvلn، نويسنده , , Donald H. and Posada-Amarillas، نويسنده , , Alvaro، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
6
From page
15
To page
20
Abstract
Electronic structure and optical properties calculations of NiSi2 were carried out using the Full-Potential Linearized Augmented Plane Waves (FLAPW) method, within the Density Functional Theory (DFT) with the Local Density Approximation (LDA). Band structure and total and projected density of states (DOS) are calculated as well as the theoretical Electron Energy-Loss (EEL) Spectrum, utilizing experimental lattice parameters. Our theoretical EELS results are in agreement with recent experimental findings, indicating that the main peak corresponds to a plasmon. Additional peaks in our calculations are identified as interband transitions (at 2.67 eV, 4.77 eV and 6.1 eV) associated to transitions between Ni d and Si p states, and low magnitude plasmons (at 1.3 eV and 4.02 eV).
Keywords
Ab initio , DFT , Electronic structure , Optical properties , Transition metals silicides
Journal title
Computational Materials Science
Serial Year
2010
Journal title
Computational Materials Science
Record number
1687522
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