Title of article
Adsorption of potassium on GaAs(110)
Author/Authors
E.C and Gayone، نويسنده , , J.E. and Sلnchez، نويسنده , , E.A. and Grizzi، نويسنده , , O. and Passeggi Jr.، نويسنده , , M.C.G. and Vidal، نويسنده , , R.A. and Ferrَn، نويسنده , , J.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2000
Pages
4
From page
137
To page
140
Abstract
The adsorption of potassium on the GaAs(110) surface has been studied by ion scattering and recoiling spectroscopy (SARS) and Auger electron spectroscopy (AES). The SARS measurements indicate that a major part of the potassium atoms adsorb along the [001] gallium rows, in a region close to the sites of a new arsenic layer, and that only a minor part of the potassium atoms adsorb along the [001] arsenic rows. In agreement with this suggestion, the energy shifts in the substrate Auger peaks indicate that, at the beginning of the adsorption, the potassium atoms react preferentially with gallium atoms.
Keywords
Gallium arsenide , Metal–semiconductor interfaces , Low energy ion scattering (LEIS) , Auger electron spectroscopy
Journal title
Surface Science
Serial Year
2000
Journal title
Surface Science
Record number
1687854
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