Title of article :
Adsorption of potassium on GaAs(110)
Author/Authors :
E.C and Gayone، نويسنده , , J.E. and Sلnchez، نويسنده , , E.A. and Grizzi، نويسنده , , O. and Passeggi Jr.، نويسنده , , M.C.G. and Vidal، نويسنده , , R.A. and Ferrَn، نويسنده , , J.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2000
Pages :
4
From page :
137
To page :
140
Abstract :
The adsorption of potassium on the GaAs(110) surface has been studied by ion scattering and recoiling spectroscopy (SARS) and Auger electron spectroscopy (AES). The SARS measurements indicate that a major part of the potassium atoms adsorb along the [001] gallium rows, in a region close to the sites of a new arsenic layer, and that only a minor part of the potassium atoms adsorb along the [001] arsenic rows. In agreement with this suggestion, the energy shifts in the substrate Auger peaks indicate that, at the beginning of the adsorption, the potassium atoms react preferentially with gallium atoms.
Keywords :
Gallium arsenide , Metal–semiconductor interfaces , Low energy ion scattering (LEIS) , Auger electron spectroscopy
Journal title :
Surface Science
Serial Year :
2000
Journal title :
Surface Science
Record number :
1687854
Link To Document :
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