Title of article
Coadsorption of hydrogen and bismuth on the Si(111)7×7 surface
Author/Authors
Bulavenko، نويسنده , , S.Yu and Fedorchenko، نويسنده , , M.I and Melnik، نويسنده , , P.V. and Nakhodkin، نويسنده , , M.G، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2000
Pages
5
From page
213
To page
217
Abstract
Coadsorption of bismuth and hydrogen on the Si(111)7×7 surface is investigated by scanning tunneling microscopy (STM) and ultraviolet photoelectron spectroscopy (UPS). Hydrogenation of the Si(111)7×7 surface is shown to change the mechanism of bismuth film growth from Stranski–Krastanov to Volmer–Weber mode. Sizes of bismuth islands and the electronic structure of the interface are found to depend on the hydrogenation degree of the silicon surface and an adsorption sequence of hydrogen and bismuth.
Keywords
Visible and ultraviolet photoelectron spectroscopy , Bismuth , Growth , hydrogen atom , Adsorption kinetics , Surface chemical reaction , Scanning tunneling microscopy
Journal title
Surface Science
Serial Year
2000
Journal title
Surface Science
Record number
1687921
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