Title of article
Photo-induced change of the semiconductor–vacuum interface of p-GaAs(100) studied by photoelectron spectroscopy
Author/Authors
Kamada، نويسنده , , M. and Murakami، نويسنده , , J. and Tanaka، نويسنده , , S. and More، نويسنده , , S.D. and Itoh، نويسنده , , M. and Fujii، نويسنده , , Y.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2000
Pages
4
From page
525
To page
528
Abstract
The photo-induced change in the semiconductor–vacuum interface on GaAs(100) and Cs/GaAs(100) has been investigated with core-level photoelectron spectroscopy using synchrotron radiation and a mode-locked Nd:YAG laser. Both Ga-3d and As-3d photoelectron peaks showed transient energy shifts under the laser irradiation without any spectral change. The amounts of energy shift were strongly dependent on the sample temperature and laser photon flux. It is shown that the experimental results can be fitted to a theoretical curve which was derived from the photo-induced band bending scheme in the surface layer of the semiconductor.
Keywords
Synchrotron radiation photoelectron spectroscopy , Bending of surfaces , Gallium arsenide , Surface electronic phenomena (work function , Photoemission (total yield) , Surface potential , etc.) , Surface states , Surface photovoltage
Journal title
Surface Science
Serial Year
2000
Journal title
Surface Science
Record number
1688157
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