• Title of article

    A kinetic scanning tunneling microscopy study of iron silicide growth on Si(113)

  • Author/Authors

    M. and Kneppe، نويسنده , , M. and Dorna، نويسنده , , V. and Kohstall، نويسنده , , P. and Kot، نويسنده , , Sophie E. and Kِhler، نويسنده , , U.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2000
  • Pages
    5
  • From page
    802
  • To page
    806
  • Abstract
    High-temperature kinetic scanning tunneling microscopy (STM) studies are used to investigate the surface morphology and growth mode of iron silicide on Si(113) formed by gas-source reactive iron deposition with Fe(CO)5 as precursor. The first monolayer of silicide on Si(113) forms a (4×n) reconstruction that covers the surface completely before growth proceeds via the formation of strongly anisotropic, three-dimensional silicide islands. After the first monolayer is closed, growth is slowed down by a blocked interdiffusion with the silicon substrate and a reduced sticking probability for the precursor. Lateral spreading of the islands is achieved by a stoichiometric codeposition of iron and silicon using Fe(CO)5 and Si2H6. In this way, nearly closed layers of silicide can be grown.
  • Keywords
    Silicides , Single crystal epitaxy , Low energy electron diffraction (LEED) , Metal–semiconductor nonmagnetic thin film structures , Scanning tunneling microscopy
  • Journal title
    Surface Science
  • Serial Year
    2000
  • Journal title
    Surface Science
  • Record number

    1688392