Title of article
Study of the CdTe/As/Si(111) interface by scanning tunneling microscopy and X-ray photoelectron spectroscopy
Author/Authors
Wiame، نويسنده , , F. and Rujirawat، نويسنده , , S. and Brill، نويسنده , , G. and Xin، نويسنده , , Yan and Caudano، نويسنده , , R. and Sivananthan، نويسنده , , S. and Browning، نويسنده , , N.D. and Sporken، نويسنده , , R.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2000
Pages
5
From page
818
To page
822
Abstract
The structure of the CdTe/As/Si(111) interface has been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) after desorption of a 5 μm thick CdTe film grown by molecular beam epitaxy. After annealing around 500°C, 2D islands of CdTe remain on the As/Si(111) surface. Both XPS and STM show a coverage of ∼1/4 of a monolayer. STM reveals that islands are not homogeneously distributed, but that a depleted zone exists on top of the step edges. These results agree with a model based on CdAs bonds at the interface to explain the growth of CdTe(1̄1̄1̄)B on As-terminated Si(111).
Keywords
X-ray photoelectron spectroscopy , Arsenic , Cadmium telluride , Scanning tunneling microscopy , Silicon , surface structure , morphology , Roughness , and topography
Journal title
Surface Science
Serial Year
2000
Journal title
Surface Science
Record number
1688416
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