Title of article
Pattern formation in PbTe multilayer films
Author/Authors
Teichert، نويسنده , , C. and Jamnig، نويسنده , , B. and Oswald، نويسنده , , J.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2000
Pages
4
From page
823
To page
826
Abstract
Atomic force microscopy is used to study the surface morphology evolution of PbTe films that have been grown by hot-wall epitaxy on BaF2(111) substrates. We found that the morphology strongly depends on the doping type of the films. For film thicknesses of about 1500 nm, Te rich films (p-type) show uniform pyramids with hexagonal bases whereas Pb rich films (n-type) exhibit irregularly shaped crystallites with (111) terraces on top. By growing npn multilayers we observe the formation of uniform triangular pyramids in the second n-layer. The arrangement of the pyramids can be controlled by varying the thickness of the p-layer. In addition to this pattern formation, the insertion of the p-layers reduces the surface roughness compared with that of the single n-layers.
Keywords
atomic force microscopy , epitaxy , Semiconducting films , SELF-ASSEMBLY , Lead telluride , morphology , surface structure , Roughness , and topography
Journal title
Surface Science
Serial Year
2000
Journal title
Surface Science
Record number
1688422
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