Title of article
Electronic structure and morphology of SiC films grown on Si(111) using C60 as a precursor
Author/Authors
Schiavuta، نويسنده , , P. and Cepek، نويسنده , , C. and Sancrotti، نويسنده , , M. and Pedio، نويسنده , , M. and Berti، نويسنده , , M. and De Salvador، نويسنده , , D. and Drigo، نويسنده , , A.V.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2000
Pages
5
From page
827
To page
831
Abstract
We report on the electronic, compositional and morphological properties of ultra-thin and thick SiC films produced via disruption of C60 cages onto the Si(111) 7×7 surface. The influence of the reaction temperature and the growth mode of the films have been investigated by means of photoemission spectroscopy, low energy electron diffraction, atomic force microscopy, and Rutherford backscattering.
Keywords
Fullerenes , growth , silicon carbide , Ceramic thin films
Journal title
Surface Science
Serial Year
2000
Journal title
Surface Science
Record number
1688427
Link To Document