Oxidation of the H-Si(111)-1×1 surface: high resolution Si 2p core-level spectroscopy with synchrotron radiation

The room temperature oxidation of H-terminated Si(111) surfaces by activated oxygen has been investigated using high resolution (70 meV) Si 2p core-level spectroscopy with synchrotron radiation. The data are compared with previous studies using photoemission spectroscopy and high resolution electron energy loss spectroscopy. The metastability of the oxidized layer formed at room temperature is also examined.