Title of article :
Imaging size-selected silicon clusters with a low-temperature scanning tunneling microscope
Author/Authors :
Messerli، نويسنده , , Stéphane and Schintke، نويسنده , , Silvia and Morgenstern، نويسنده , , Karina and Sanchez، نويسنده , , Antonio and Heiz، نويسنده , , Ueli and Schneider، نويسنده , , Wolf-Dieter، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2000
Pages :
8
From page :
331
To page :
338
Abstract :
Size-selected Si30 and Si39 clusters produced by a laser vaporization cluster source are deposited on the Ag(111) surface at room temperature and at liquid-nitrogen temperature respectively. Subsequently, the sample is transferred at low temperature (120 K) in a separate mobile ultrahigh vacuum chamber (vacuum-suitcase) from the cluster source to a low-temperature scanning tunneling microscope (STM). Soft landing of the supported clusters is indicated by the following observations: (i) atomic-resolution images taken at low bias voltages show transparent Si clusters and an unperturbed Ag(111) substrate; (ii) manipulation experiments on the supported clusters and subsequently taken atomic-resolution images show a defect-free Ag(111) surface. In spite of the fact that the clusters are mass-selected in the gas phase, a statistical analysis of the STM images indicates a finite size-distribution on the support. This finding is attributed to the presence of different isomers and/or cluster orientations on the surface.
Keywords :
Silicon , silver , Clusters , Metal–semiconductor interfaces , Scanning tunneling microscopy
Journal title :
Surface Science
Serial Year :
2000
Journal title :
Surface Science
Record number :
1688889
Link To Document :
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