A core level and valence band photoemission study of the (1 1 1) and (1̄ 1̄ 1̄) surfaces of 3C–SiC

A core level and valence band photoemission study of thick 3C–SiC(1 1 1) and 3C–SiC(1̄ 1̄ 1̄) epilayers grown by sublimation epitaxy is reported. The as introduced samples show threefold 1×1 low-energy electron diffraction patterns. For the Si face 3 and 63 reconstructed surfaces develop after in situ heating to 1100°C and 1300°C, respectively. For the C face a 3×3 reconstruction form after heating to 980°C. A semiconducting behavior is observed for the 3 and 3×3 reconstructed surfaces while the 63 reconstruction show a Fermi edge and thus a metallic-like behavior. The surface state on the 3 surface is investigated and found to have Λ1 symmetry and a total band width of 0.10 eV within the first surface Brillouin zone. For the Si 2p and C 1s core levels binding energies and surface shifted components are extracted and compared to earlier reported results for 6H– and 4H–SiC.