Author/Authors :
Zhu، نويسنده , , Guoliang and Dai، نويسنده , , Yongbing and Shu، نويسنده , , Da and Xiao، نويسنده , , Yanping and Yang، نويسنده , , Yongxiang and Wang، نويسنده , , Jun and Sun، نويسنده , , Baode and Boom، نويسنده , , Rob، نويسنده ,
Abstract :
The formation energies of various point defects in Al3Ti(D022) have been calculated by using first-principles calculation. The effects of vacancies on Si site preference were examined to better understand Si substitution behavior in Al3Ti. The results show that, under Al-rich condition, the formation energy of antisite AlTi is the lowest than those of other point defects, and Ti vacancy is more preferred than Al vacancy. But Si prefers to occupy Al vacancy compared with Ti vacancy which causes a finite solubility of Si in Al3Ti system. The calculation is instructive for the further improvements of process of Si removal.
