Title of article :
Electronic and optical properties of W-doped SnO2 from first-principles calculations
Author/Authors :
Zhou، نويسنده , , Wei and Liu، نويسنده , , Lijuan and Yuan، نويسنده , , Mengying and Song، نويسنده , , Qinggong and Wu، نويسنده , , Ping، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
6
From page :
109
To page :
114
Abstract :
The electronic and optical properties of W-doped SnO2 are investigated by first-principles calculations in this work. The results show that the Fermi level shifts into the conduction band and the compound exhibits n-type metallic characters with high conductivity when W atoms substitute Sn atoms. As for defect cases, oxygen vacancies increase the density of states near the Fermi level resulting in a possible increase in the conductivity of W-doped SnO2, while the Sn vacancies make the Fermi level shift into the valence band and narrow the band gap. And the formation energy analysis indicates the possibility of W dopant and related defects forming in SnO2 crystal. The W-doped SnO2 shows high optical anisotropy, and the blue-shift of optical spectra can be observed. Additionally, the increased absorption in the visible region can be expected with the presence of oxygen vacancies in the crystal.
Keywords :
electronic properties , Optical properties , First-Principles Calculations , transparent conducting oxide
Journal title :
Computational Materials Science
Serial Year :
2012
Journal title :
Computational Materials Science
Record number :
1689497
Link To Document :
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