Title of article
Adsorption mechanism of CH3Cl on Si(1 0 0)-2×1
Author/Authors
Lee، نويسنده , , Jun Young and Kim، نويسنده , , Sehun، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
5
From page
196
To page
200
Abstract
The adsorption mechanism of CH3Cl on Si(1 0 0)-2×1 has been studied by the experiment and semiempirical calculations. For adsorption at room temperature, the existence of a precursor state was confirmed from the dependence of the sticking probability of CH3Cl on the surface coverage and substrate temperature. From Auger electron spectroscopy measurements, we have found the difference in activation barrier heights for chemisorption and desorption from the precursor state, (Ed−Ea), to be 0.28±0.01 eV, indicating a nonactivated adsorption process. The optimized precursor state and the potential energy curve for the adsorption of CH3Cl on Si(1 0 0)-2×1 were also calculated by the semiempirical PM3 method based on a cluster model.
Keywords
Silicon , Solid–gas interfaces , Auger electron spectroscopy , Clusters , Semi-empirical models and model calculations , Halides
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1689941
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