• Title of article

    Structural and electronic properties of oxygen vacancy in lead-free KTa1−xNbxO3: Comparative first-principles calculations

  • Author/Authors

    Shen، نويسنده , , Yanqing and Zhou، نويسنده , , Zhongxiang، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2012
  • Pages
    4
  • From page
    193
  • To page
    196
  • Abstract
    The structural and electronic properties of (0) and (+2) charged oxygen vacancies ( V o 0 and V o + 2 ) in KTN are investigated through first-principles density functional calculations. We have tested three exchange–correlation functionals local-density approximation (LDA), the Perdew–Burke–Ernzerhof (PBE) generalized-gradient approximation (GGA), and Wu–Cohen (WC) GGA. WC leads to excellent improvements of geometry predications of KTN (with Vo) over LDA and PBE, although they all underestimate the band gap. We find that V o 0 state is metallic, in good agreement with the conclusion of Vo in KNbO3, and there is a defect peak 0.23 eV below the Fermi level which is related to the infrared absorption. The charged Vo state plays an essential role in the displacements of Ta and O ions. We have shown that V o + 2 state of KTN is the most stable in practice, and V o 0 state may be obtained by introducing extra electrons to V o + 2 . The results of our calculations indicate that Vo plays an essential role in the metal–insulator transitions in KTN and hence studying Vo is necessitate and significant for devices design.
  • Keywords
    First Principles Calculations , Charged oxygen vacancies , Metal–insulator transitions , WC GGA
  • Journal title
    Computational Materials Science
  • Serial Year
    2012
  • Journal title
    Computational Materials Science
  • Record number

    1690037