Title of article :
Electron correlation in the Si(1 0 0) surface
Author/Authors :
Paz، نويسنده , , سscar and da Silva، نويسنده , , Antônio J.R and José Sلenz، نويسنده , , Juan and Artacho، نويسنده , , Emilio، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Pages :
6
From page :
458
To page :
463
Abstract :
Motivated by the controversy between quantum chemists and solid-state physicists, and by recent experimental results, spin-polarized density-functional (DFT) calculations are used to probe electron correlation in the Si(1 0 0) reconstructed surface. The ground state displays antiferromagnetic spin polarization for low dimer inclinations indicating, not magnetic order, but the importance of Mott-like correlations among dangling bonds. The lowest energy corresponds to a higher dimer inclination with no spin. DFT energies, however, should be taken with caution here. Our results together with quantum-chemical findings suggest dimers with highly correlated electrons that tend to buckle due to interactions with other dimers.
Keywords :
Surface relaxation and reconstruction , Density functional calculations , Silicon , Low index single crystal surfaces
Journal title :
Surface Science
Serial Year :
2001
Journal title :
Surface Science
Record number :
1690042
Link To Document :
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