Title of article :
Electronic structures and magnetism of Cr3Z (Z = Si, Ge, Sb) with DO3 structures
Author/Authors :
Zhang، نويسنده , , X.M. and Dai، نويسنده , , X.F. and Jia، نويسنده , , H.Y. and Chen، نويسنده , , G.F. and Liu، نويسنده , , H.Y. and Luo، نويسنده , , H.Z. and Li، نويسنده , , Y. and Yu، نويسنده , , X. and Liu، نويسنده , , G.D. and Wang، نويسنده , , W.H. and Wu، نويسنده , , G.H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Abstract :
The electronic structures and magnetism of the Cr3Z (Z = Si, Ge, Sb) compounds with a DO3 structure were investigated by the first-principle calculations. The Cr3Z (Z = Si, Ge, Sb) are predicted to be half-metallic ferrimagnets at their equilibrium lattice constants and retain a high spin polarisation in a quite wide range of lattice distortions. In the Cr3Z (Z = Si, Ge, Sb) compounds, the magnetic moments of Cr(A) and Cr(C) atoms are the same, and they are antiparallel to that of the Cr(B) atom. The total magnetic moments are −2μB per unit cell for Cr3Si and Cr3Ge and −1μB for Cr3Sb, which is consistent with the Slater–Pauling rule.
Keywords :
Half-metallicity , Heusler Compound , Electronic structure , DO3 structure
Journal title :
Computational Materials Science
Journal title :
Computational Materials Science