Investigation of Al–a-Si1−xCx interface

Low pressure chemical vapour deposited amorphous silicon carbide films were prepared using a liquid single precursor like hexamethyldisilane. Aluminium/silicon carbide interfaces were analysed before and after various treatments, such as annealing at 400–550°C or non-conventional treatment in a pyramidal box. Interface chemistry of untreated and treated aluminium layers on silicon carbide films in correlation with electrical properties was established. Analytical methods as secondary ion mass spectrometry and X-ray photoelectron spectroscopy revealed very reactive interfaces on investigated structures, the transition phase being dependent on the film composition and structure. The interface mechanism changes with both carbide film properties and treatment conditions.