Title of article
Ultra-narrow photoluminescence line widths in InAs quantum dots multilayers
Author/Authors
Gonzلlez، نويسنده , , J.C and Matinaga، نويسنده , , F.M. and Rodrigues، نويسنده , , W.N. and Moreira، نويسنده , , M.V.B. and de Oliveira، نويسنده , , A.G.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
4
From page
836
To page
839
Abstract
Combining the coherence–incoherence transition of the InAs islands with the multistacking of islands planes, a very narrow photoluminescence line width of 13.6 meV was obtained. This line width is comparable to the band-to-band recombination from InGaAs quantum wells and multiquantum wells.
Keywords
Molecular Beam Epitaxy , superlattices , Indium arsenide , Photoluminescence , Gallium arsenide , SELF-ASSEMBLY
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1690178
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