Author/Authors :
Mart??nez Boubeta، نويسنده , , C. and Menéndez، نويسنده , , J.L. and Costa-Kr?mer، نويسنده , , J.L. and Garc??a، نويسنده , , J.M. and Anguita، نويسنده , , J.V. and Besc?s، نويسنده , , B. and Cebollada، نويسنده , , Marيa A. and Briones، نويسنده , , F. and Chernykh، نويسنده , , A.V. and Malikov، نويسنده , , I.V. and Mikhailov، نويسنده , , G.M.، نويسنده ,
Abstract :
High quality metal/insulator heterostructures are grown epitaxially on semiconductor GaAs(1 0 0) substrates using appropriate MgO(1 0 0) buffer layers. Two model systems are described: Fe/MgO/Fe trilayers, that are used to fabricate and study epitaxial magnetic tunnel junctions, and W(1 0 0) films, which exhibit ballistic transport properties with high electron mobility. In both cases the quality of the crystalline structure as well as the interfaces at the atomic level are related to the observed magnetic and transport properties.
Keywords :
Metal–semiconductor magnetic thin film structures , epitaxy , Electrical transport measurements , Magnetic phenomena (cyclotron resonance , etc.) , Iron , Tungsten , Magnesium oxides , Metal–insulator interfaces , Phase transitions
