LEED structure analysis of Sb adsorbed Si(0 0 1) surface

Sb adsorbed Si(0 0 1) surfaces have been investigated by LEED and AES. After a few monolayer (ML) deposition at room temperature, the LEED patterns of 1×1, 2×1 and c(4×4) have been observed successively as elevating the annealing temperature. Two structures (1×1 and 2×1) were examined by LEED I–V curve analysis. The genetic algorithm (GA) was operated to search a global optimum structure. For the 1×1 structure, a good R-factor value of 0.22 was obtained for the model in which topmost 1 ML Sb atoms sit on the Si atoms of fourth substrate layer. For the 2×1 structure, two cases of 1 ML and a half ML Sb coverage was examined, and an Sb dimer model with 1 ML coverage gave a better R-factor value.