Title of article :
The structure of C60 and endohedral C60 on the Si{1 0 0} surface
Author/Authors :
Godwin، نويسنده , , P.D and Kenny، نويسنده , , S.D. and Smith، نويسنده , , R and Belbruno، نويسنده , , J، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Pages :
6
From page :
409
To page :
414
Abstract :
The possible structures of C60 on the Si{1 0 0} surface in the four dimer position over the dimer trench have been investigated using ab initio total energy minimisations. Four possible structures have been found. The fullerenes bond to the silicon surface by breaking carbon–carbon double bonds. One electron from the broken bond is contributed to the carbon–silicon bond. The second electron is involved in forming a new π-bond within the fullerene cage. The carbon–silicon bond is primarily covalent with some charge transfer. Some discussion of endohedral fullerenes is also given.
Keywords :
computer simulations , Density functional calculations , Silicon , Fullerenes , Chemisorption
Journal title :
Surface Science
Serial Year :
2001
Journal title :
Surface Science
Record number :
1690501
Link To Document :
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