Title of article :
Prediction of topological insulating behavior in inverse Heusler compounds from first principles
Author/Authors :
Zhang، نويسنده , , X.M. and Liu، نويسنده , , E.K. and Liu، نويسنده , , Z.Y. and Liu، نويسنده , , G.D. and Wu، نويسنده , , G.H. and Wang، نويسنده , , W.H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Abstract :
The topological band structures of the X2YZ inverse Heusler compounds have been investigated by the first-principle calculations. The results of this study clearly indicate that a large number of inverse Heusler compounds naturally exhibit an inverted band structure. We found that, similar to the half-Heusler family, these inverse Heusler compounds can realize the topological insulating state under hydrostatic or uniaxial lattice expansion. Importantly, most of these compounds possess a negative formation energy, which makes them more suitable in material growth and could easily achieve the topological insulating behavior by alloying or proper strain.
Keywords :
Topological insulator , Heusler Compound , Electronic structure
Journal title :
Computational Materials Science
Journal title :
Computational Materials Science