Author/Authors :
Kowalski، نويسنده , , B.J. and Pluci?ski، نويسنده , , ?. and Kopalko، نويسنده , , K. and Iwanowski، نويسنده , , R.J. and Orl?owski، نويسنده , , B.A. and Johnson، نويسنده , , R.L. and Grzegory، نويسنده , , I. and Porowski، نويسنده , , S.، نويسنده ,
Abstract :
We present the results of photoemission studies on (0 0 0 1̄) (N-polar) surfaces of bulk gallium nitride crystals. The procedures that yield clean and well-ordered (0 0 0 1̄) (1×1) surfaces were developed and tested. The surface crystallinity was assessed by low-energy electron diffraction. Angle-resolved photoemission spectroscopy with synchrotron radiation was used to determine the valence-band electronic structure of GaN along the Γ–Δ–A direction of the Brillouin zone. The band structure derived from our experimental data is compared with the results of recent band structure calculations.
Keywords :
etc.) , Surface potential , Surface electronic phenomena (work function , Gallium nitride , Surface states , Single crystal surfaces , Angle resolved photoemission
