Title of article :
Ultra-narrow photoluminescence line widths in InAs quantum dots multilayers
Author/Authors :
Gonzلlez، نويسنده , , J.C and Matinaga، نويسنده , , F.M. and Rodrigues، نويسنده , , W.N. and Moreira، نويسنده , , M.V.B. and de Oliveira، نويسنده , , A.G.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Abstract :
Combining the coherence–incoherence transition of the InAs islands with the multistacking of islands planes, a very narrow photoluminescence line width of 13.6 meV was obtained. This line width is comparable to the band-to-band recombination from InGaAs quantum wells and multiquantum wells.
Keywords :
Gallium arsenide , Molecular Beam Epitaxy , SELF-ASSEMBLY , Photoluminescence , superlattices , Indium arsenide
Journal title :
Surface Science
Journal title :
Surface Science
