Title of article
Analytical, optical and electrophysical investigations of TiBx–GaAs interface
Author/Authors
Dmitruk، نويسنده , , N.L and Ermolovich، نويسنده , , I.B and Fursenko، نويسنده , , O.V and Konakova، نويسنده , , R.V and Milenin، نويسنده , , V.V and Voitsikhovskyi، نويسنده , , D.I and Yastrubchak، نويسنده , , O.B، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
7
From page
928
To page
934
Abstract
The results of analytical (Auger electron spectroscopy, secondary ion mass spectrometry), photoluminescence, spectral ellipsometry and electrophysical investigations of the TiBx–GaAs Schottky contacts are presented. The contacts were obtained by magnetron sputtering and then were thermally annealed in hydrogen atmosphere at T= 400°C, 600°C and 800°C. It was shown that decay of the GaxB1−xAs phase in a transition layer at the interface during thermal annealing decreases its optical conductivity and causes degradation of the surface-barrier diodes.
Keywords
Auger electron spectroscopy , Gallium arsenide , Schottky barrier , Metal–semiconductor interfaces , Photoluminescence
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1691256
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