Analytical, optical and electrophysical investigations of TiBx–GaAs interface

The results of analytical (Auger electron spectroscopy, secondary ion mass spectrometry), photoluminescence, spectral ellipsometry and electrophysical investigations of the TiBx–GaAs Schottky contacts are presented. The contacts were obtained by magnetron sputtering and then were thermally annealed in hydrogen atmosphere at T= 400°C, 600°C and 800°C. It was shown that decay of the GaxB1−xAs phase in a transition layer at the interface during thermal annealing decreases its optical conductivity and causes degradation of the surface-barrier diodes.