Author/Authors :
Teodorescu، نويسنده , , C.M. and Chevrier، نويسنده , , F. and Brochier، نويسنده , , Rafael R. and Richter، نويسنده , , C. and Heckmann، نويسنده , , O. and Ilakovac، نويسنده , , V. and De Padova، نويسنده , , P. and Hricovini، نويسنده , , K.، نويسنده ,
Abstract :
In contrast with the other interfaces involving deposition of 3d transition metals on III–V semiconductors (mostly GaAs), the Fe/InAs(1 0 0) interface exhibits magnetic properties even at the lowest coverage (1 monolayer, ML) investigated. The reactivity of the interface is also lower compared with Fe/GaAs. It involves formation of an interface compound of approximate stoichiometry of FeAs mixed with metallic In islands for Fe coverages lower than 3 ML, followed by the growth of relaxed bulk α-Fe in a Vollmer–Weber mode.
Keywords :
Magnetic measurements , X-ray absorption spectroscopy , Synchrotron radiation photoelectron spectroscopy , Metal–semiconductor magnetic thin film structures , Indium arsenide , Iron
