Angle-resolved inverse photoemission of the (2×1)-reconstructed 3C-SiC(0 0 1) surface

We have investigated the two-domain (2×1)-reconstructed 3C-SiC(0 0 1) surface using angle-resolved inverse photoemission. An unoccupied surface state band at ESS=2.0 eV with respect to the valence band maximum (VBM) at the Γ point is completely located within the bulk band gap. Further, an unoccupied surface resonance at ESR=3.6 eV above VBM is observed. Both surface structures show no dispersion in ΓJ and ΓJ′ directions, respectively. The energetic position of both is in good agreement with LDA surface band structure calculations. However, LDA calculations predict a dispersion of about 0.8–1.0 eV for the surface state band and about 0.5–0.8 eV for the surface resonance band, while experimentally no dispersion in ΓJ and ΓJ′ directions is observed.