Title of article :
Negative differential resistance induced by the Jahn–Teller effect in single molecular coulomb blockade devices
Author/Authors :
Ying، نويسنده , , Huahu and Zhou، نويسنده , , Wu-Xing and Chen، نويسنده , , Ke-Qiu and Zhou، نويسنده , , Guanghui، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2014
Abstract :
Using valence bond theory in combination with a master equation technique, we have investigated the electron transport properties of benzene-based coulomb blockade devices. The results show that the benzene molecule undergoes a Jahn–Teller distortion when ionized, which lifts the state degeneracy. The lifted degenerate states couple differently to the left and right electrodes, leading to negative differential resistance. This type of negative differential resistance involves the Jahn–Teller effect and symmetry-breaking, which provides a way to design coulomb blockade devices with negative differential resistance behavior.
Keywords :
Electronic transport in nanoscale systems , Negative differential resistance , Jahn–Teller effect
Journal title :
Computational Materials Science
Journal title :
Computational Materials Science