• Title of article

    The growth and field evaporation of Er and deuterated Er films

  • Author/Authors

    Solano، نويسنده , , I. and Schwoebel، نويسنده , , P.R.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2012
  • Pages
    8
  • From page
    590
  • To page
    597
  • Abstract
    The morphological structure of clean and deuterated Er films deposited on W substrates and their removal by field evaporation have been investigated as part of a program directed toward the development of deuterium ion sources for neutron generators. Annealed Er films up to ~ 20 monolayers in thickness deposited on W < 110 > substrates appear pseudomorphic. Thicker annealed films form a hexagonal close-packed < 0001 > orientated over-layer with the Pitsch–Schrader orientation relation. The pseudomorphic and hexagonal close-packed character of the films is retained up to the last atomic layer that forms the film-substrate interface. Deuterated Er films appear polycrystalline. At 77 K in Ar, annealed Er films field evaporate at 2.5 V/Å primarily as Er2 + and deuterated Er films evaporate at ~ 2.4 V/Å primarily as ErDx2 +. Field evaporation of both clean and deuterated Er films shows signs of space charge induced field lowering when film thicknesses exceeding ~ 10 layers were field evaporated using 20 ns duration voltage pulses.
  • Keywords
    Ion source , Erbium , Tungsten , mass spectrometry , Crystal growth , Atom probe , Thin film morphology , Field evaporation
  • Journal title
    Surface Science
  • Serial Year
    2012
  • Journal title
    Surface Science
  • Record number

    1692121