Author/Authors :
Shimomura، نويسنده , , M. and Munakata، نويسنده , , M. and Iwasaki، نويسنده , , A. and Ikeda، نويسنده , , M. and Abukawa، نويسنده , , T. and Sato، نويسنده , , K. and Kawawa، نويسنده , , T. and Shimizu، نويسنده , , H. N. Nagashima، نويسنده , , N. and Kono، نويسنده , , S.، نويسنده ,
Abstract :
Atomistic morphology and structure of Si(0 0 1) surface exposed to ethylene at room temperature have been studied by scanning tunneling microscopy (STM) and photoelectron diffraction (PED). At an ethylene coverage (θC) of ∼0.5 monolayer (ML, carbon atom/surface Si-atom), both p(2×2) and c(4×2) structures were clearly resolved in atomistic STM images. The alignments of chemisorbed ethylene of p(2×2) and c(4×2) were confirmed by PED and further shown is that the local structure around chemisorbed ethylene at θC≅0.5 ML is identical to that at the saturation coverage of 1 ML.
Keywords :
Scanning tunneling microscopy , morphology , and topography , Silicon , Surface relaxation and reconstruction , alkenes , Photoelectron diffraction , surface structure , Roughness
