• Title of article

    Structural study of 2D dysprosium germanide and silicide by means of quantitative LEED I–V analysis

  • Author/Authors

    Bonet، نويسنده , , C. and Spence، نويسنده , , D.J. and Tear، نويسنده , , S.P.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2002
  • Pages
    8
  • From page
    183
  • To page
    190
  • Abstract
    Quantitative low energy electron diffraction (LEED) studies have been carried out to determine the structure of the rare-earth germanide Ge(1 1 1)1×1–Dy and the rare-earth silicide Si(1 1 1)1×1–Dy. The analyses reveal structures similar to that of other rare-earth silicides previously studied in which the dysprosium is located sub-surface below a reverse-buckled silicon/germanium bilayer. The LEED study has clearly demonstrated that the dysprosium atom is located above a substrate T4 site and refines earlier MEIS results.
  • Keywords
    Low energy electron diffraction (LEED) , Lanthanides , Silicon , Metal–semiconductor interfaces , Silicides , Germanium
  • Journal title
    Surface Science
  • Serial Year
    2002
  • Journal title
    Surface Science
  • Record number

    1693946