Adsorption of SiH4 on copper (1 1 0) and (1 1 1) surfaces

The adsorption of silane on Cu(1 1 1) and Cu(1 1 0) is examined using vibrational electron energy loss spectroscopy, angle-resolved ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy. At room temperature, SiH adsorbs on Cu(1 1 1), whereas complete dissociation occurs on Cu(1 1 0) to leave adsorbed silicon. Below room temperature, an SiHx (x=2 or 3) species exists on both surfaces. A surface-molecule bonding model is constructed to describe the adsorbate–substrate interactions and suggests that both Si and SiH adsorb in a substitutional or hollow site on the (1 1 1) surface and Si adsorbs in one of the same two sites on the (1 1 0) surface.