Title of article
Initial stages of adsorption in the Cu/Si(1 1 1) system
Author/Authors
Shukrinov، نويسنده , , P. and Savchenkov، نويسنده , , A. and Mutombo، نويسنده , , P. and Chلb، نويسنده , , V. and Slezلk، نويسنده , , J.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2002
Pages
5
From page
223
To page
227
Abstract
The adsorption of Cu atoms on a Si(1 1 1)-7×7 surface was studied using scanning tunnelling microscopy. Two different kinds of clusters were found at room temperature and we associate them with copper atoms embedded in subsurface layers. Short annealing at ∼550 °C stimulates a reaction, leading to the substitution of corner Si adatoms in the 7×7 unit cell. This configuration is stable with respect to continuing thermal processing.
Keywords
Copper , Scanning tunneling microscopy , Surface chemical reaction , surface segregation , Silicon , Metal–semiconductor interfaces
Journal title
Surface Science
Serial Year
2002
Journal title
Surface Science
Record number
1694109
Link To Document