Author/Authors :
Orlowski، نويسنده , , B.A. and Mickevi?ius، نويسنده , , S. J. Kowalski، نويسنده , , B.J. and Nadolny، نويسنده , , A.J. and Taliashvili، نويسنده , , B. and Ghijsen، نويسنده , , J. and Mirabella، نويسنده , , F. and Johnson، نويسنده , , R.L.، نويسنده ,
Abstract :
X-ray photoelectron and ultraviolet resonant photoemission spectroscopy was used to study the Sn0.96Mn0.04Te MBE layers. The surface chemical composition of the samples after different treatment conditions was studied by means of XPS. Resonant photoemission spectroscopy with application of the synchrotron radiation was applied to investigate the electronic structure and the contribution of Mn 3d electrons to the valence band of Sn0.96Mn0.04Te layers. The contribution of the Mn 3d electrons to the valence band electronic structure appears at the valence band with the maximum located at 4.0 eV below the valence band edge.
Keywords :
Magnetic films , X-ray photoelectron spectroscopy , Molecular Beam Epitaxy , Semiconducting films , Synchrotron radiation photoelectron spectroscopy
