Photoemission study of Gd on clean Si(1 1 1) surface

Resonant photoemission spectroscopy, with application of synchrotron radiation, was used to study of the valence band electronic structure of clean surface of the Si crystal doped with Gd and of these surface after deposition of 12 ML of Gd atoms. Fano-type resonant photoemission spectra corresponding to the Gd 4d–4f transition were measured to determine the contribution of Gd 4f electrons to the valence band of Gd/Si crystal surface. The resonant and antiresonant photon energies of Gd atoms deposited on Si surface were found as equal 151.8 and 146.8 eV, respectively. Position of Gd 4f electrons contribution was found at 9.8 eV below the valence band edge of Gd/Si valence band.