Title of article
Electronic band structure of gallium nitride: a comparative angle-resolved photoemission study of single crystals and thin films
Author/Authors
Plucinski، نويسنده , , L. and Strasser، نويسنده , , T. and Kowalski، نويسنده , , B.J. and Rossnagel، نويسنده , , K. and Boetcher، نويسنده , , T. and Einfeldt، نويسنده , , S. and Hommel، نويسنده , , D. and Grzegory، نويسنده , , I. and Porowski، نويسنده , , S. and Orlowski، نويسنده , , B.A. and Schattke، نويسنده , , W. and Johnson، نويسنده , , R.L.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2002
Pages
6
From page
223
To page
228
Abstract
Angle-resolved photoemission measurements on gallium nitride single crystals and epitaxial thin films with wurtzite structure were performed using synchrotron radiation. Calculated theoretical final state bands were used to determine the corresponding k vectors in reciprocal space using the direct transition model. We were able to identify several previously unobserved features including several surface states and transitions to non-free-electron final states. Significant differences in the surface electronic band structure between thin film and single crystal samples were observed.
Keywords
Semiconducting films , Gallium nitride , Low index single crystal surfaces , Angle resolved photoemission , Surface potential , Surface states , etc.) , Surface electronic phenomena (work function
Journal title
Surface Science
Serial Year
2002
Journal title
Surface Science
Record number
1694286
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