Author/Authors :
Plucinski، نويسنده , , L. and Strasser، نويسنده , , T. and Kowalski، نويسنده , , B.J. and Rossnagel، نويسنده , , K. and Boetcher، نويسنده , , T. and Einfeldt، نويسنده , , S. and Hommel، نويسنده , , D. and Grzegory، نويسنده , , I. and Porowski، نويسنده , , S. and Orlowski، نويسنده , , B.A. and Schattke، نويسنده , , W. and Johnson، نويسنده , , R.L.، نويسنده ,
Abstract :
Angle-resolved photoemission measurements on gallium nitride single crystals and epitaxial thin films with wurtzite structure were performed using synchrotron radiation. Calculated theoretical final state bands were used to determine the corresponding k vectors in reciprocal space using the direct transition model. We were able to identify several previously unobserved features including several surface states and transitions to non-free-electron final states. Significant differences in the surface electronic band structure between thin film and single crystal samples were observed.
Keywords :
Semiconducting films , Gallium nitride , Low index single crystal surfaces , Angle resolved photoemission , Surface potential , Surface states , etc.) , Surface electronic phenomena (work function
